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| 30V N-Channel Power MOSFET General Description The AAT9460 is a low threshold MOSFET designed for applications in DC-DC Converter, battery, cell phone, and PDA markets. Using AnalogicTechTM's ultra-high density proprietary TrenchDMOSTM technology, this product demonstrates high power handling and small size. AAT9460 Features * * * VDS(MAX) = 30V ID(MAX) 1 = 3.4A @ 25C Low RDS(ON): * 58 m @ VGS = 4.5V * 84 m @ VGS = 2.5V Applications * * * * DC-DC Converters Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment SC59 Package Top View D 3 Preliminary Information 1 G 2 S Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25C unless otherwise noted) Value 30 12 3.4 2.7 8.0 1.0 1.1 0.7 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TA = 25C TA = 70C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25C TA = 70C W C Operating Junction and Storage Temperature Range Thermal Characteristics Symbol RJA RJA2 RJF Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1 1 1 Value 140 115 45 Units C/W 9460.2003.10.0.63 1 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions Min 30 46 65 8 0.6 100 1 5 9 5 0.9 1 6 3 30 8 1.3 1.0 58 84 AAT9460 Typ Max Units V m A V nA A S DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250A VGS=-4.5V, ID=3.4A RDS(ON) Drain-Source ON-Resistance 2 VGS=-2.5V, ID=2.8A ID(ON) On-State Drain Current 2 VGS=4.5V, VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250A IGSS Gate-Body Leakage Current VGS=12V, VDS=0V VGS=0V, VDS=30V IDSS Drain Source Leakage Current VGS=0V, VDS=24V, TJ=70C 3 gfs Forward Transconductance 2 VDS=-5V, ID=3.4A 3 Dynamic Characteristics QG Total Gate Charge VDS=15V, RD=4.2, VGS=4.5V QGS Gate-Source Charge VDS=15V, RD=4.2, VGS=4.5V QGD Gate-Drain Charge VDS=15V, RD=4.2, VGS=4.5V tD(ON) Turn-ON Delay VDS=15V, RD=4.2, VGS=4.5V, tR Turn-ON Rise Time VDS=15V, RD=4.2, VGS=4.5V, tD(OFF) Turn-OFF Delay VDS=15V, RD=4.2, VGS=4.5V, tF Turn-OFF Fall Time VDS=15V, RD=4.2, VGS=4.5V, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=3.4A IS Continuous Diode Current 1 nC RG=6 RG=6 RG=6 RG=6 ns V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RFA is determined by PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse width = 300 s. Note 3: Guaranteed by design. Not subject to production testing. 2 9460.2003.10.0.63 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Output Characteristics 8 AAT9460 Transfer Characteristics 8 5V 4.5V 6 3.5V 3V 2.5V 2V ID (A) VD=VG 6 IDS (A) 4 4 125C 2 2 25C 0 0.5 1 1.5 -55C 2 2.5 3 1.5V 0 0 0.5 1 1.5 2 0 VGS (V) VDS (V) On-Resistance vs. Drain Current 120 100 120 100 On-Resistance vs. Gate to Source Voltage ID = 3.6A RDS(ON) (m) RDS(ON) (m) 80 60 40 20 0 0 80 60 40 20 0 VGS = 2.5V VGS = 4.5V 2 4 6 8 0 1 2 3 4 5 ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.6 0.3 Threshold Voltage ID = 250A Normalized RDS(ON) VGS(th) Variance (V) -25 0 25 50 75 100 125 150 1.4 1.2 1 0.8 0.6 -50 VGS = 4.5V ID = 3.6A 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 TJ (C) TJ (C) 9460.2003.10.0.63 3 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Gate Charge 5 4 3 2 1 0 0 1 2 3 4 5 6 0.1 0 0.2 0.4 0.6 0.8 1 1.2 AAT9460 Source-Drain Diode Forward Voltage 10 VD=15A ID=3.6A IS (A) TJ = 150C 1 VGS (V) TJ = 25C QG, Charge (nC) VSD (V) Capacitance 1000 800 600 400 200 0 0 5 10 15 20 25 30 Capacitance (pF) CISS CRSS COSS VDS (V) 4 9460.2003.10.0.63 30V N-Channel Power MOSFET Ordering Information Package SC59 Marking HA Part Number (Tape and Reel) AAT9460IGY-T1 AAT9460 Package Information SC59 2.85 0.15 1.575 0.125 0.95 BSC 1.90 BSC 2.80 0.20 0.075 0.075 1.20 0.30 0.40 0.10 x 3 0.45 0.15 All dimensions in millimeters. 0.14 0.06 4 4 9460.2003.10.0.63 5 30V N-Channel Power MOSFET AAT9460 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 9460.2003.10.0.63 |
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